Datasheet > 2N6802

2N6802

更新时间： 2023-12-06 20:12:16

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	1124K
描述
500V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6802 with Hermetic Packaging

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2N6802 数据手册

IRFF430

JANTX2N6802/JANTXV2N6802

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

Fig 9. Maximum Drain Current Vs.

Fig 10. Maximum Avalanche Energy

Case Temperature

Vs. Drain Current

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

International Rectifier HiRel Products, Inc.

2018-11-20

1 2 345 6 7

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型号	品牌	描述	获取价格	数据表
2N6802SCC5205/019	INFINEON	Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se	获取价格
2N6802U	MICROSEMI	N-CHANNEL MOSFET	获取价格
2N6804	MICROSEMI	P-CHANNEL MOSFET	获取价格
2N6804_12	MAS	This 2N6804 switching transistor is military qualified up to the JANTXV level for high-rel	获取价格
2N6804E3	MICROSEMI	Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Met	获取价格
2N6804PBF	INFINEON	Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta	获取价格