Datasheet > 2N6668BA

2N6668BA

更新时间： 2024-11-08 08:32:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
61页	376K
描述
10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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2N6668BA 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose amplifier and low speed switching applications.

•

High DC Current Gain — h = 3500 (Typ) @ I = 4 Adc

FE C

PNP SILICON

DARLINGTON

POWER TRANSISTORS

10 AMPERES

Collector–Emitter Sustaining Voltage — @ 200 mAdc

= 60 Vdc (Min) — 2N6667

= 80 Vdc (Min) — 2N6668

CEO(sus)

•

Low Collector–Emitter Saturation Voltage — V

= 2 Vdc (Max) @ I = 5 Adc

CE(sat) C

60–80 VOLTS

65 WATTS

Monolithic Construction with Built–In Base–Emitter Shunt Resistors

TO–220AB Compact Package

Complementary to 2N6387, 2N6388

COLLECTOR

BASE

8 k

120

CASE 221A–06

TO–220AB

EMITTER

Figure 1. Darlington Schematic

Rating

MAXIMUM RATINGS (1)

Symbol

2N6667

2N6668

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

Collector Current — Continuous

— Peak

Base Current

250

mAdc

Total Device Dissipation @ T = 25 C

Derate above 25 C

0.52

watts

W/ C

Total Device Dissipation @ T = 25 C

Derate above 25 C

Watts

W/ C

0.016

Operating and Storage Junction Temperature Range

T , T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(1) Indicates JEDEC Registered Data.

1.92

62.5

θJC

θJA

REV 1

3–147

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...61

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2N6668-DR6260	RENESAS	获取价格	10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
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2N6668-DR6274	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
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2N6668DW	ONSEMI	获取价格	10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN