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2N6668BD PDF预览

2N6668BD

更新时间: 2024-11-26 03:30:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
61页 376K
描述
10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6668BD 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low speed switching applications.  
High DC Current Gain — h = 3500 (Typ) @ I = 4 Adc  
FE C  
PNP SILICON  
DARLINGTON  
POWER TRANSISTORS  
10 AMPERES  
Collector–Emitter Sustaining Voltage — @ 200 mAdc  
V
V
= 60 Vdc (Min) — 2N6667  
= 80 Vdc (Min) — 2N6668  
CEO(sus)  
CEO(sus)  
Low Collector–Emitter Saturation Voltage — V  
= 2 Vdc (Max) @ I = 5 Adc  
CE(sat) C  
6080 VOLTS  
65 WATTS  
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
TO–220AB Compact Package  
Complementary to 2N6387, 2N6388  
COLLECTOR  
BASE  
8 k  
120  
CASE 221A–06  
TO–220AB  
EMITTER  
Figure 1. Darlington Schematic  
Rating  
MAXIMUM RATINGS (1)  
Symbol  
2N6667  
60  
2N6668  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
60  
80  
CB  
EB  
V
5
Collector Current — Continuous  
— Peak  
I
C
10  
15  
Base Current  
I
B
250  
mAdc  
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
65  
0.52  
watts  
W/ C  
Total Device Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2
Watts  
W/ C  
0.016  
Operating and Storage Junction Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
(1) Indicates JEDEC Registered Data.  
R
R
1.92  
62.5  
θJC  
θJA  
REV 1  
3–147  
Motorola Bipolar Power Transistor Device Data  

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