是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.27 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 25 |
JEDEC-95代码: | TO-202 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN (315) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 75 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N6552LEADFREE | CENTRAL |
功能相似 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/ | |
BU406 | MOTOROLA |
功能相似 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6556N | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-202VAR | |
2N6556PBFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N6557 | NJSEMI |
获取价格 |
NPN SILICON AMPLIFIER TRANSISTORS | |
2N6557LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plast | |
2N6557N | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 500MA I(C) | TO-202VAR | |
2N6558 | NJSEMI |
获取价格 |
NPN SILICON AMPLIFIER TRANSISTORS | |
2N6558LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plast | |
2N6558N | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | TO-202VAR | |
2N6559 | NJSEMI |
获取价格 |
NPN SILICON AMPLIFIER TRANSISTORS | |
2N6559N | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | TO-202AC |