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2N6517BU PDF预览

2N6517BU

更新时间: 2024-02-14 03:51:37
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
7页 242K
描述
500 mA High Voltage Bipolar Junction Transistors

2N6517BU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:LEAD FREE PACKAGE-3针数:3
Reach Compliance Code:unknown风险等级:5.27
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:350 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3湿度敏感等级:NOT APPLICABLE
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN认证状态:COMMERCIAL
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHz

2N6517BU 数据手册

 浏览型号2N6517BU的Datasheet PDF文件第1页浏览型号2N6517BU的Datasheet PDF文件第2页浏览型号2N6517BU的Datasheet PDF文件第3页浏览型号2N6517BU的Datasheet PDF文件第4页浏览型号2N6517BU的Datasheet PDF文件第6页浏览型号2N6517BU的Datasheet PDF文件第7页 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO92 3 4.825x4.76  
CASE 135AN  
ISSUE O  
DATE 31 JUL 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13880G  
TO92 3 4.825X4.76  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  

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