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2N6518 PDF预览

2N6518

更新时间: 2024-11-17 22:35:55
品牌 Logo 应用领域
三星 - SAMSUNG 晶体小信号双极晶体管
页数 文件大小 规格书
1页 44K
描述
PNP EPITAXIAL SILICON TRANSISTOR

2N6518 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.14
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:250 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
最大关闭时间(toff):3.5 ns最大开启时间(吨):200 ns
Base Number Matches:1

2N6518 数据手册

  

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2N6518-18F CENTRAL

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Small Signal Bipolar Transistor, 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18F,
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Small Signal Bipolar Transistor, 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18F,
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2N6518-5F CENTRAL

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2N6518-5T CENTRAL

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Small Signal Bipolar Transistor, 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-5T,
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2N6518APP CENTRAL

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Small Signal Bipolar Transistor, 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2N6518BU FAIRCHILD

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Small Signal Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2N6518D26Z FAIRCHILD

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Small Signal Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92