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2N6517RLRAG PDF预览

2N6517RLRAG

更新时间: 2024-11-21 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
8页 102K
描述
高电压晶体管

2N6517RLRAG 数据手册

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ON Semiconductort  
NPN  
2N6515  
2N6517  
PNP  
High Voltage Transistors  
MAXIMUM RATINGS  
2N6517  
2N6520  
Rating  
Symbol  
2N6515  
250  
Unit  
Vdc  
Vdc  
Vdc  
2N6520  
Collector–Emitter Voltage  
Collector–Base Voltage  
V
V
350  
CEO  
Voltage and current are negative  
for PNP transistors  
250  
350  
CBO  
Emitter–Base Voltage  
2N6515, 2N6516, 2N6517  
2N6519, 2N6520  
V
EBO  
6.0  
5.0  
Base Current  
I
250  
500  
mAdc  
mAdc  
B
Collector Current –  
Continuous  
I
C
Total Device Dissipation  
P
P
625  
5.0  
mW  
mW/°C  
D
1
@ T = 25°C  
2
3
A
Derate above 25°C  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Total Device Dissipation  
1.5  
12  
Watts  
mW/°C  
D
@ T = 25°C  
C
Derate above 25°C  
Operating and Storage  
Junction  
Temperature Range  
T , T  
J stg  
–55 to +150  
°C  
COLLECTOR  
3
THERMAL CHARACTERISTICS  
Characteristic  
2
Symbol Max  
Unit  
°C/W  
°C/W  
BASE  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
200  
qJA  
NPN  
EMITTER  
83.3  
1
qJC  
COLLECTOR  
3
2
BASE  
PNP  
1
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
Collector–Emitter Breakdown Voltage  
V
Vdc  
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
2N6515  
2N6517, 2N6520  
250  
350  
C
B
Collector–Base Breakdown Voltage  
(I = 100 µAdc, I = 0 )  
V
(BR)CBO  
2N6515  
2N6517, 2N6520  
250  
350  
C
E
Emitter–Base Breakdown Voltage  
(I = 10 µAdc, I = 0)  
V
(BR)EBO  
2N6515, 2N6517  
2N6520  
6.0  
5.0  
E
C
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
October, 2001 – Rev. 3  
2N6515/D  

2N6517RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
2N6517TA FAIRCHILD

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FAIRCHILD Small Signal Transistors
2N6517CTA FAIRCHILD

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FAIRCHILD Small Signal Transistors
MPSA42 ONSEMI

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High Voltage Transistors(NPN Silicon)

与2N6517RLRAG相关器件

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2N6517RLRPG ONSEMI

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高电压晶体管
2N6517STOA DIODES

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暂无描述
2N6517STOE DIODES

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2N6517TA ONSEMI

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500 mA High Voltage Bipolar Junction Transistors
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2N6517TRB CENTRAL

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Small Signal Bipolar Transistor, 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,