Datasheet > 2N6498AKAK

2N6498AKAK

更新时间： 2024-11-05 05:33:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
61页	366K
描述
5A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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2N6498AKAK 数据手册

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

5 AMPERE

POWER TRANSISTORS

NPN SILICON

. . . designed for high voltage inverters, switching regulators and line–operated

amplifier applications. Especially well suited for switching power supply applications.

•

High Collector–Emitter Sustaining Voltage —

250 & 300 VOLTS

80 WATTS

= 250 Vdc (Min) — 2N6497

= 300 Vdc (Min) — 2N6498

CEO(sus)

•

Excellent DC Current Gain

= 10–75 @ I = 2.5 Adc

Low Collector–Emitter Saturation Voltage @ I = 2.5 Adc —

= 1.0 Vdc (Max) — 2N6497

= 1.25 Vdc (Max) — 2N6498

CE(sat)

CASE 221A–06

TO–220AB

MAXIMUM RATINGS (1)

Rating

Symbol

2N6497

250

2N6498

300

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

350

400

6.0

Collector Current — Continuous

— Peak

5.0

Base Current

2.0

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.64

Watts

W/ C

Operating and Storage Junction Temperature Range

T ,T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

1.56

C/W

θJC

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

3–136

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...61

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