2N6498BSBS

更新时间： 2024-02-23 05:07:14

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
8页	65K
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2N6498BSBS 数据手册

ON Semiconductor⁾

High Voltage NPN Silicon

Power Transistors

2N6497

. . . designed for high voltage inverters, switching regulators and

line–operated amplifier applications. Especially well suited for

switching power supply applications.

5 AMPERE

POWER TRANSISTORS

NPN SILICON

250 VOLT

• High Collector–Emitter Sustaining Voltage –

= 250 Vdc (Min)

80 WATTS

CEO(sus)

• Excellent DC Current Gain

= 10–75 @ I = 2.5 Adc

• Low Collector–Emitter Saturation Voltage @ I = 2.5 Adc –

= 1.0 Vdc (Max)

CE(sat)

MAXIMUM RATINGS (1)

Rating

Symbol

Value

250

350

6.0

Unit

Vdc

Adc

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current – Continuous

CEO

4. COLLECTOR

CASE 221A–09

TO–220AB

5.0

–

Peak

Base Current

2.0

Adc

Total Power Dissipation @ T = 25_C

0.64

Watts

W/_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

T ,T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

1.56

_C/W

θJC

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

April, 2002 – Rev. 11

2N6497/D

12 3 4 5 6 7 8

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