Datasheet > 2N6499

2N6499

更新时间： 2024-09-23 06:17:19

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	189K
描述
isc Silicon NPN Power Transistors

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2N6499 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

2N6497/6498/6499

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 250V(Min)- 2N6497

= 300V(Min)- 2N6498

= 350V(Min)- 2N6499

·DC Current Gain-

: h_FE= 10-75@I_C= 2.5A

APPLICATIONS

·Designed for high voltage inverters, switching regulators

and line operated amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

350

400

450

250

300

350

UNIT

2N6497

2N6498

2N6499

2N6497

2N6498

2N6499

V_CBO

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current

P_D

T_j

Total Power Dissipation@T_C=25℃

Junction Temperature

Storage Temperature

℃

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Thermal Rresistance,Junction to Case

1.56 ℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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