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2N6498BGBG PDF预览

2N6498BGBG

更新时间: 2024-09-23 21:05:31
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
61页 366K
描述
5A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6498BGBG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):3JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):5 MHz
Base Number Matches:1

2N6498BGBG 数据手册

 浏览型号2N6498BGBG的Datasheet PDF文件第2页浏览型号2N6498BGBG的Datasheet PDF文件第3页浏览型号2N6498BGBG的Datasheet PDF文件第4页浏览型号2N6498BGBG的Datasheet PDF文件第5页浏览型号2N6498BGBG的Datasheet PDF文件第6页浏览型号2N6498BGBG的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
5 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
. . . designed for high voltage inverters, switching regulators and line–operated  
amplifier applications. Especially well suited for switching power supply applications.  
High Collector–Emitter Sustaining Voltage —  
250 & 300 VOLTS  
80 WATTS  
V
V
= 250 Vdc (Min) — 2N6497  
= 300 Vdc (Min) — 2N6498  
CEO(sus)  
CEO(sus)  
Excellent DC Current Gain  
h
= 1075 @ I = 2.5 Adc  
FE  
Low Collector–Emitter Saturation Voltage @ I = 2.5 Adc —  
C
C
V
V
= 1.0 Vdc (Max) — 2N6497  
= 1.25 Vdc (Max) — 2N6498  
CE(sat)  
CE(sat)  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS (1)  
Rating  
Symbol  
2N6497  
250  
2N6498  
300  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
350  
400  
CB  
EB  
V
6.0  
6.0  
Collector Current — Continuous  
— Peak  
I
C
5.0  
10  
5.0  
10  
Base Current  
I
B
2.0  
2.0  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
80  
0.64  
80  
0.64  
Watts  
W/ C  
Operating and Storage Junction Temperature Range  
T ,T  
J stg  
65 to +150  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data.  
R
1.56  
C/W  
θJC  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
3–136  
Motorola Bipolar Power Transistor Device Data  

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