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2N6491AS PDF预览

2N6491AS

更新时间: 2024-12-01 13:04:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 65K
描述
15A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6491AS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.72外壳连接:COLLECTOR
最大集电极电流 (IC):15 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):5
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):5 MHzBase Number Matches:1

2N6491AS 数据手册

 浏览型号2N6491AS的Datasheet PDF文件第2页浏览型号2N6491AS的Datasheet PDF文件第3页浏览型号2N6491AS的Datasheet PDF文件第4页浏览型号2N6491AS的Datasheet PDF文件第5页浏览型号2N6491AS的Datasheet PDF文件第6页浏览型号2N6491AS的Datasheet PDF文件第7页 
ON Semiconductor)  
NPN  
Complementary Silicon Plastic  
Power Transistors  
2N6487  
*
*
2N6488  
. . . designed for use in general–purpose amplifier and switching  
applications.  
PNP  
2N6490  
DC Current Gain Specified to 15 Amperes —  
h
= 20–150 @ I = 5.0 Adc  
FE  
= 5.0 (Min) @ I = 15 Adc  
C
2N6491  
C
*ON Semiconductor Preferred Device  
Collector–Emitter Sustaining Voltage —  
= 60 Vdc (Min) – 2N6487, 2N6490  
V
CEO(sus)  
= 80 Vdc (Min) – 2N6488, 2N6491  
15 AMPERE  
COMPLEMENTARY  
SILICON  
High Current Gain — Bandwidth Product  
f = 5.0 MHz (Min) @ I = 1.0 Adc  
POWER TRANSISTORS  
60–80 VOLTS  
T
C
TO–220AB Compact Package  
75 WATTS  
MAXIMUM RATINGS (1)  
2N6487  
2N6490  
2N6488  
2N6491  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Base Current  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
4
V
CEO  
60  
70  
80  
90  
V
CB  
V
EB  
5.0  
15  
STYLE 1:  
I
C
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
I
B
5.0  
1
4. COLLECTOR  
Total Power Dissipation @ T = 25_C  
P
75  
0.6  
Watts  
2
C
D
3
Derate above 25_C  
W/_C  
CASE 221A–09  
TO–220AB  
Total Power Dissipation @ T = 25_C  
P
D
1.8  
0.014  
Watts  
A
Derate above 25_C  
W/_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
_C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.67  
70  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction to Case  
R
θJC  
Thermal Resistance, Junction to Ambient  
(1) Indicates JEDEC Registered Data.  
R
θJA  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 10  
2N6487/D  

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