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2N6076_1 PDF预览

2N6076_1

更新时间: 2024-11-01 03:56:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
3页 30K
描述
SILICON PNP SMALL SIGNAL TRANSISTOR

2N6076_1 数据手册

 浏览型号2N6076_1的Datasheet PDF文件第2页浏览型号2N6076_1的Datasheet PDF文件第3页 
DISCRETE POWER & SIGNAL  
TECHNOLOGIES  
2N6076  
SILICON PNP SMALL SIGNAL TRANSISTOR  
BVCEO . . . . 25 V (Min)  
0.135 - 0.145  
(3.429 - 3.683)  
1
2
3
1
2
3
B
C
E
hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA  
0.175 - 0.185  
(4.450 - 4.700)  
ABSOLUTE MAXIMUM RATINGS (NOTE 1)  
TEMPERATURES  
LOGOXYY  
2N  
0.175 - 0.185  
(4.450 - 4.700)  
Storage Temperature  
-55 Degrees C to 150 Degrees C  
150 Degrees C  
Operating Junction Temperature  
6076  
SEATING  
PLANE  
POWER DISSIPATION (NOTES 2 & 3)  
Total Device Dissipation at TA = 25 Deg C  
625 mW  
0.500  
VOLTAGES & CURRENT  
(12.70) MIN  
VCEO  
VCBO  
VEBO  
IC  
Collector to Emitter  
Collector to Base  
Emitter to Base  
25 V  
25 V  
5 V  
0.016 - 0.021  
(0.410- 0.533)  
Collector Current  
500 mA  
0.045 - 0.055  
(1.143- 1.397)  
0.095 - 0.105  
(2.413 - 2.667)  
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)  
SYM  
CHARACTERISTICS  
MIN MAX UNITS  
TEST CONDITIONS  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Cutoff Current  
25  
25  
5
V
IC =  
100 uA  
10 mA  
10 uA  
V
IC =  
IE =  
V
100  
10  
nA  
uA  
nA  
uA  
VCB = 25 V  
VCB = 25 V , T=+100°C  
VCE = 25 V  
ICES  
Collector Cutoff Current  
Emitter Cutoff Current  
100  
100  
500  
0.25  
0.8  
IEBO  
VEB = 3.0 V  
hFE  
DC Current Gain  
100  
0.5  
VCE = 10 V  
IC = 10 mA  
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
IC = 10mA IB = 1.0mA  
IC = 10mA IB = 1.0mA  
VBE(on)  
Base -Emitter On Voltage  
1.2  
V
VCE = 10 V IC = 10mA  
2n6076.ppt6894 revA  
ã 1998 Fairchild Semiconductor Corporation  

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