Datasheet > 2N6077

2N6077

更新时间： 2024-01-14 15:54:02

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	127K
描述
Silicon NPN Power Transistors

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技术参数
数据手册

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2N6077 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83

2N6077 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6077 2N6078 2N6079

DESCRIPTION

·With TO-66 package

·Low collector saturation voltage

·High breakdown voltage

APPLICATIONS

·For horizontal deflection output stages

of TV’s and CRT’s

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

300

275

375

275

250

350

UNIT

2N6077

2N6078

2N6079

2N6077

2N6078

2N6079

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

Open collector

T_C=25℃

V_EBO

I_C

Emitter-base voltage

Collector current

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

℃

150

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

4.28

℃/W

12 3

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