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2N6030 PDF预览

2N6030

更新时间: 2024-11-25 05:57:51
品牌 Logo 应用领域
锦美电子 - JMNIC 晶体晶体管
页数 文件大小 规格书
3页 44K
描述
Silicon PNP Power Transistors

2N6030 数据手册

 浏览型号2N6030的Datasheet PDF文件第2页浏览型号2N6030的Datasheet PDF文件第3页 
Product Specification  
www.jmnic.com  
Silicon PNP Power Transistors  
2N6029 2N6030  
DESCRIPTION  
·With TO-3 package  
·Complement to type 2N5629 2N5630  
APPLICATIONS  
·For high voltage and high power  
amplifier applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
Open emitter  
VALUE  
100  
120  
100  
120  
7
UNIT  
2N6029  
2N6030  
2N6029  
2N6030  
VCBO  
Collector-base voltage  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
16  
Collector current-peak  
Base current  
20  
A
5.0  
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
200  
150  
-65~200  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
0.875  
/W  
JMnic  

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