Datasheet > 2N6031

2N6031

更新时间： 2024-09-28 06:18:11

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	112K
描述
Silicon PNP Power Transistors

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中文翻译

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2N6031 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6031

DESCRIPTION

·With TO-3 package

·Complement to type 2N5631

·High collector sustaining voltage

·High DC current gain

·Low collector saturation voltage

APPLICATIONS

·For high power audio amplifier and

high voltage switching regulator

circuits applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-140

-7

UNIT

Open base

Open collector

-16

I_CM

Collector current-peak

Base current

-20

I_B

-5.0

P_D

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

200

ꢀ

T_j

150

T_stg

-65~200

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

0.875

ꢀ/W

12 3

中文翻译

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与2N6031相关器件

型号	品牌	获取价格	描述	数据表
2N6031E3	MICROSEMI	获取价格	Power Bipolar Transistor, 16A I(C), 140V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
2N6031G	ONSEMI	获取价格	高电压大功率晶体管
2N6031PBFREE	CENTRAL	获取价格	暂无描述
2N6032	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3
2N6032	GE	获取价格	HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS
2N6032	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
2N6032E3	MICROSEMI	获取价格	Power Bipolar Transistor, 50A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6033	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
2N6033	NJSEMI	获取价格	HIGH-CURRENT, HIGH-SPEED, HIGH-POWER TRANSISTORS
2N6033	GE	获取价格	HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS