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| 生命周期： | Active | 包装说明： | , |
| Reach Compliance Code： | compliant | 风险等级： | 5.61 |
| Base Number Matches： | 1 |
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2N5953TRA | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRB | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRC | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRE | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRELEADFREE | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRF | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRG | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5953TRH | CENTRAL |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2N5954 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO66 |
|
| 2N5954 | NJSEMI |
获取价格 |
Silicon N-P-N and P-N-P Medium-Power Transistors |
|
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