Datasheet > 2N5955

2N5955

更新时间： 2024-11-28 06:17:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	123K
描述
Silicon PNP Power Transistors

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中文翻译

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2N5955 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5954 2N5955 2N5956

DESCRIPTION

·With TO-66 package

·Low collector saturation voltage

·Excellent safe operating area

·Complement to type 2N6372/6373/6374

APPLICATIONS

·Designed for driver circuits,switching

and amplifier applications

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-66) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-90

UNIT

2N5954

2N5955

2N5956

2N5954

2N5955

2N5956

V_CBO

Collector-base voltage

Open emitter

-70

-50

-80

V_CEO

Collector-emitter voltage

Open base

-60

-40

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

-5

ꢀ

-6

I_B

Base current

-2

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

4.3

ꢀ/W

12 3

中文翻译

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与2N5955相关器件

型号	品牌	获取价格	描述	数据表
2N5956	CENTRAL	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
2N5956	SAVANTIC	获取价格	Silicon PNP Power Transistors
2N5956	ISC	获取价格	Silicon PNP Power Transistors
2N5956	JMNIC	获取价格	Silicon PNP Power Transistors
2N5956	NJSEMI	获取价格	Silicon N-P-N and P-N-P Medium-Power Transistors
2N5956	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO66
2N5956E3	MICROSEMI	获取价格	Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,
2N5956LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2
2N5957	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| TO-210AC
2N5957E3	MICROSEMI	获取价格	暂无描述