Datasheet > 2N5954

2N5954

更新时间： 2024-11-28 06:18:47

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管局域网
页数	文件大小	规格书
3页	53K
描述
Silicon PNP Power Transistors

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2N5954 数据手册

Product Specification

www.jmnic.com

Silicon PNP Power Transistors

2N5954 2N5955 2N5956

DESCRIPTION

·With TO-66 package

·Low collector-emitter saturation voltage

·Excellent safe operating area

·Complement to type 2N6372 2N6373 2N6374

APPLICATIONS

·Designed for driver circuits,switching

and amplifier applications

PINNING

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5954

2N5955

2N5956

2N5954

2N5955

2N5956

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current

Open collector

I_B

Base current

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

4.3

℃/W

JMnic

12 3

中文翻译

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