是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-66 |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.15 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 6 A |
集电极-发射极最大电压: | 40 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 5 | JEDEC-95代码: | TO-66 |
JESD-30 代码: | O-MBFM-P2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 最低工作温度: | -65 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 40 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5 MHz | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5957 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | TO-210AC | |
2N5957E3 | MICROSEMI |
获取价格 |
暂无描述 | |
2N5958 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, | |
2N5958E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, | |
2N5959 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | TO-210AC | |
2N5959E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, | |
2N5960 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin, | |
2N5961 | FAIRCHILD |
获取价格 |
NPN General Purpose Amplifier | |
2N5961 | CENTRAL |
获取价格 |
NPN SILICON TRANSISTOR | |
2N5961 | TI |
获取价格 |
60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |