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2N5956LEADFREE PDF预览

2N5956LEADFREE

更新时间: 2024-11-21 20:10:11
品牌 Logo 应用领域
CENTRAL 局域网开关晶体管
页数 文件大小 规格书
2页 431K
描述
Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2

2N5956LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-66
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.15
外壳连接:COLLECTOR最大集电极电流 (IC):6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-66
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):5 MHzVCEsat-Max:2 V
Base Number Matches:1

2N5956LEADFREE 数据手册

 浏览型号2N5956LEADFREE的Datasheet PDF文件第2页 
2N5954 2N5955 2N5956 PNP  
2N6372 2N6373 2N6374 NPN  
www.centralsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N5954 and  
2N6372 SERIES types are complementary Silicon  
Power Transistors manufactured by the epitaxial base  
process, mounted in a hermetically sealed metal case  
designed for general purpose amplifier and switching  
applications.  
MARKING: FULL PART NUMBER  
TO-66 CASE  
2N5954  
2N6372  
90  
2N5955  
2N6373  
70  
2N5956  
2N6374  
50  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
C
V
CBO  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
90  
85  
80  
70  
50  
45  
40  
V
V
CEV  
CER  
CEO  
EBO  
V
65  
V
V
60  
5.0  
V
V
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
6.0  
A
C
I
2.0  
A
B
P
40  
W
°C  
°C/W  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
4.3  
J
stg  
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
2N5954  
2N6372  
2N5955  
2N6373  
2N5956  
2N6374  
SYMBOL  
TEST CONDITIONS  
MIN MAX MIN MAX  
MIN MAX  
UNITS  
μA  
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
=85V, V =1.5V, R =100Ω  
-
-
-
100  
-
-
-
-
CEV  
CEV  
CEV  
CEV  
CEV  
CEV  
CER  
CER  
CER  
CEO  
CEO  
CEO  
EBO  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
BE  
BE BE  
=65V, V =1.5V, R =100Ω  
BE BE  
-
-
100  
-
-
μA  
μA  
mA  
mA  
mA  
μA  
μA  
μA  
mA  
mA  
mA  
mA  
V
=45V, V =1.5V, R =100Ω  
-
-
-
-
100  
BE BE  
=85V, V =1.5V, R =100Ω, T =150°C -  
BE BE  
2.0  
-
-
-
-
C
=65V, V =1.5V, R =100Ω, T =150°C -  
-
-
2.0  
-
-
BE BE  
C
=45V, V =1.5V, R =100Ω, T =150°C -  
-
-
-
-
2.0  
BE BE  
C
=75V  
=55V  
=35V  
=65V  
=45V  
=25V  
=5.0V  
-
-
100  
-
-
-
-
-
-
100  
-
-
-
-
-
-
-
100  
-
1.0  
-
-
-
-
-
-
-
1.0  
-
-
1.0  
0.1  
-
-
-
0.1  
-
-
-
0.1  
-
-
-
-
-
BV  
BV  
BV  
I =100mA, V =1.5V, R =100Ω  
BE BE  
90  
85  
80  
70  
65  
60  
50  
45  
40  
CEV  
CER  
CEO  
C
I =100mA, R =100Ω  
-
-
-
V
C
BE  
I =100mA  
-
-
-
V
C
R1 (24-November 2010)  

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