2N5954 2N5955 2N5956 PNP
2N6372 2N6373 2N6374 NPN
www.centralsemi.com
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5954 and
2N6372 SERIES types are complementary Silicon
Power Transistors manufactured by the epitaxial base
process, mounted in a hermetically sealed metal case
designed for general purpose amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
2N5954
2N6372
90
2N5955
2N6373
70
2N5956
2N6374
50
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
SYMBOL
UNITS
V
C
V
CBO
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
90
85
80
70
50
45
40
V
V
CEV
CER
CEO
EBO
V
65
V
V
60
5.0
V
V
Continuous Collector Current
Continuous Base Current
Power Dissipation
I
6.0
A
C
I
2.0
A
B
P
40
W
°C
°C/W
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +200
4.3
J
stg
Θ
JC
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
2N5954
2N6372
2N5955
2N6373
2N5956
2N6374
SYMBOL
TEST CONDITIONS
MIN MAX MIN MAX
MIN MAX
UNITS
μA
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
=85V, V =1.5V, R =100Ω
-
-
-
100
-
-
-
-
CEV
CEV
CEV
CEV
CEV
CEV
CER
CER
CER
CEO
CEO
CEO
EBO
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
BE
BE BE
=65V, V =1.5V, R =100Ω
BE BE
-
-
100
-
-
μA
μA
mA
mA
mA
μA
μA
μA
mA
mA
mA
mA
V
=45V, V =1.5V, R =100Ω
-
-
-
-
100
BE BE
=85V, V =1.5V, R =100Ω, T =150°C -
BE BE
2.0
-
-
-
-
C
=65V, V =1.5V, R =100Ω, T =150°C -
-
-
2.0
-
-
BE BE
C
=45V, V =1.5V, R =100Ω, T =150°C -
-
-
-
-
2.0
BE BE
C
=75V
=55V
=35V
=65V
=45V
=25V
=5.0V
-
-
100
-
-
-
-
-
-
100
-
-
-
-
-
-
-
100
-
1.0
-
-
-
-
-
-
-
1.0
-
-
1.0
0.1
-
-
-
0.1
-
-
-
0.1
-
-
-
-
-
BV
BV
BV
I =100mA, V =1.5V, R =100Ω
BE BE
90
85
80
70
65
60
50
45
40
CEV
CER
CEO
C
I =100mA, R =100Ω
-
-
-
V
C
BE
I =100mA
-
-
-
V
C
R1 (24-November 2010)