Datasheet > 2N5912C(TO-71)

2N5912C(TO-71)

更新时间： 2024-11-25 20:05:43

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MICROSS		/
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2N5912C(TO-71) 数据手册

2N5912C

MONOLITHIC DUAL

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix & National 2N5912C

FEATURES

The 2N5912C are monolithic dual JFETS. The

Improved Direct Replacement for SILICONIX & NATIONAL 2N5912C

monolithic dual chip design reduces parasitics and

gives better performance at very high frequencies while

ensuring extremely tight matching. These devices are

an excellent choice for use as wideband differential

amplifiers in demanding test and measurement

applications. The 2N5912C is a direct replacement for

discontinued Siliconix and National 2N5912C.

LOW NOISE (10KHz)

e_n~ 4nV/√Hz

g_fs≥ 4000µS

HIGH TRANSCONDUCTANCE (100MHz)

ABSOLUTE MAXIMUM RATINGS ¹

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation (Total)

Maximum Currents

‐65°C to +150°C

‐55°C to +135°C

The hermetically sealed TO-71 is well suited for military

applications.

(See Packaging Information).

500mW

2N5912C Applications:

Gate Current

50mA

Wideband Differential Amps

High-Speed,Temp-Compensated Single-

Ended Input Amps

Maximum Voltages

Gate to Drain

Gate to Source

‐25V

High-Speed Comparators

Impedance Converters and vibrations

detectors.

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)

SYMBOL

|V_GS1– V_GS2

CHARACTERISTIC

Differential Gate to Source Cutoff Voltage

MIN

‐‐

TYP

‐‐

MAX

UNITS

CONDITIONS

V_DG= 10V, I_D= 5mA

∆|V_GS1– V_GS2| / ∆T

Differential Gate to Source Cutoff

Voltage Change with Temperature

Gate to Source Saturation Current Ratio

‐‐

µV/°C

V_DG= 10V, I_D= 5mA

T_A= ‐55°C to +125°C

V_DS= 10V, V_GS= 0V

I_DSS1/ I_DSS2

0.95

‐‐

|I_G1– I_G2

Differential Gate Current

V_DG= 10V, I_D= 5mA

T_A= +125°C

V_DS= 10V, I_D= 5mA, f = 1kHz

g_fs1/ g_fs2

Forward Transconductance Ratio²

0.95

Click To Buy

CMRR

Common Mode Rejection Ratio

‐‐

V_DG= 5V to 10V, I_D= 5mA

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

V_GS(F)

V_GS

CHARACTERISTICS

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate to Source Forward Voltage

Gate to Source Voltage

MIN.

‐25

‐1

‐‐

‐0.3

TYP.

‐‐

0.7

‐‐

MAX.

UNITS

CONDITIONS

I_G= ‐1µA, V_DS= 0V

V_DS= 10V, I_D= 1nA

I_G= 1mA, V_DS= 0V

V_DG= 10V, I_G= 5mA

V_DS= 10V, V_GS= 0V

V_GS= ‐15V, V_DS= 0V

V_DG= 10V, I_D= 5mA

‐5

‐‐

‐4

I_DSS

I_GSS

Gate to Source Saturation Current³

‐‐

‐50

Gate Leakage Current³

Gate Operating Current

‐‐

‐1

I_G

g_fs

Forward Transconductance

Output Conductance

4000

‐‐

10000

100

150

1.2

µS

V_DG= 10V, I_D= 5mA

g_os

C_ISS

C_RSS

e_n

Input Capacitance

Reverse Transfer Capacitance

Noise Figure

V_DG= 10V, I_D= 5mA, f = 1MHz

V_DG= 10V, I_D= 5mA, f = 10kHz, R_G= 100KΩ

V_DG= 10V, I_D= 5mA, f = 100Hz

Equivalent Input Noise Voltage

nV/√Hz

‐‐

V_DG= 10V, I_D= 5mA, f = 10kHz

Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3%

3. Assumes smaller value in numerator

Available Packages:

TO-71 (Top View)

2N5912C in TO-71

2N5912C available as bare die

Please contact Micross for full package and die dimensions:

Email: chipcomponents@micross.com

Web: www.micross.com/distribution.aspx

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

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与2N5912C(TO-71)相关器件

型号	品牌	获取价格	描述	数据表
2N5912C_TO-71	MICROSS	获取价格	MONOLITHIC DUAL N-CHANNEL JFET
2N5912-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, N-Channel, Junction FET
2N5912H	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78
2N5912X	CALOGIC	获取价格	Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, DIE
2N5913	NJSEMI	获取价格	SI NPN POWER BJT
2N5916	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 24V V(BR)CEO \| 200MA I(C) \| STX-6
2N5918	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 750MA I(C) \| STX-6
2N5926	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 50A I(C) \| TO-210AE
2N5927	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 100A I(C) \| TO-114
2N5928	NJSEMI	获取价格	SILICON NPN TRANSISTOR

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