Datasheet > 2N5929

2N5929

更新时间： 2024-02-01 04:20:28

品牌	Logo	应用领域
SEME-LAB		晶体晶体管装置局域网
页数	文件大小	规格书
1页	15K
描述
Bipolar NPN Device in a Hermetically sealed TO3

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N5929 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.91	最大集电极电流 (IC)：	30 A
配置：	Single	最小直流电流增益 (hFE)：	20
JESD-609代码：	e0	最高工作温度：	200 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	100 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	标称过渡频率 (fT)：	30 MHz

2N5929 数据手册

2N5929

Dimensions in mm (inches).

Bipolar NPN Device in a

Hermetically sealed TO3

Metal Package.

25.15 (0.99)

26.67 (1.05)

6.35 (0.25)

9.15 (0.36)

10.67 (0.42)

11.18 (0.44)

1.52 (0.06)

3.43 (0.135)

Bipolar NPN Device.

V_CEO= 80V

(case)

3.84 (0.151)

4.09 (0.161)

I_C= 30A

7.92 (0.312)

12.70 (0.50)

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

JANTX, JANTXV and JANS specifications.

TO3 (TO204AA)

PINOUTS

1 – Base

2 – Emitter

Case - Collector

Parameter

Test Conditions

Min.

Typ.

Max.

Units

V_CEO*

I_C(CONT)

h_FE

@ 4/10 (V_CE/ I_C)

100

f_t

30M

P_D

100

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Generated

31-Jul-02

下载PDF

与2N5929相关器件

型号	品牌	描述	获取价格	数据表
2N593	NJSEMI	BIDIRECTIONAL TRANSISTOR	获取价格
2N5930	SEME-LAB	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package	获取价格
2N5930	MICROSEMI	Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2	获取价格
2N5931	MICROSEMI	Power Bipolar Transistor, 30A I(C), 160V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL	获取价格
2N5931E3	MICROSEMI	Power Bipolar Transistor, 30A I(C), 160V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL	获取价格
2N5932	SEME-LAB	Bipolar NPN Device in a Hermetically sealed TO3	获取价格