2N5945

更新时间： 2024-11-24 22:35:51

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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2N5945 数据手册

2N5945

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI 2N5945 is Designed for

FM Land Mobile Applications in the

400 to 960 MHz.

PACKAGE STYLE .280 4L STUD

45°

FEATURES:

• Common Emitter

• P_G= 9.0 dB at 2.0 W/470 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

0.8 A

36 V

I_C

#8-32 UNC

V_CBO

V_CEO

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

16 V

4.0 V

15 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

11.6 °C/W

.572 / 14.53

.130 / 3.30

.245 / 6.22

.255 / 6.48

.640 / 16.26

.175 / 4.45

.275 / 6.99

.217 / 5.51

.285 / 7.24

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 100 mA

I_E= 2.0 mA

BV_CES

BV_EBO

I_CBO

4.0

_CB= 15 V

_CE= 5.0 V

1.0

---

I_C= 200 mA

P_OUT= 4.0 W

---

h_FE

_CB= 12.5 V

f = 1.0 MHz

f = 470 MHz

C_ob

V_CC= 12.5 V

9.0

P_G

η_c

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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