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2N5820PBFREE#N/A

更新时间： 2024-11-07 13:04:03

品牌	Logo	应用领域
CENTRAL		晶体晶体管开关
页数	文件大小	规格书
2页	48K
描述
Small Signal Bipolar Transistor,

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技术参数
数据手册

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2N5820PBFREE#N/A 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.73
Is Samacsys：	N	Base Number Matches：	1

2N5820PBFREE#N/A 数据手册

2N5820 2N5822 NPN

2N5821 2N5823 PNP

Central

Semiconductor Corp.

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5820 series

types are epoxy molded complementary silicon

small signal transistors manufactured by the

epitaxial planar process designed for general

purpose amplifier applications where a high

collector current rating is required.

MARKING CODE: FULL PART NUMBER

TO-92-18R CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CES

CEO

EBO

5.0

750

1.0

625

1.5

Peak Collector Current

Power Dissipation

Power Dissipation (T =25°C)

Operating and Storage

Junction Temperature

T ,T

-65 to +150

°C

stg

Thermal Resistance

°C/W

200

83.3

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

2N5820

2N5821

2N5822

2N5823

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

=25V

100

CBO

=25V, T =100°C

=5.0V

µA

CBO

EBO

I =10µA

CES

I =10mA

CEO

I =10µA

5.0

EBO

I =500mA, I =50mA

0.75

1.2

0.75

1.2

CE(SAT)

I =500mA, I =50mA

BE(SAT)

=2.0V, I =500mA

0.60

1.1

0.60

100

1.1

BE(ON)

=2.0V, I =2.0mA

120

250

=2.0V, I =500mA

R1 (21-October 2005)

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