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2N5830 PDF预览

2N5830

更新时间: 2024-11-08 22:35:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
2页 28K
描述
NPN General Purpose Amplifier

2N5830 数据手册

 浏览型号2N5830的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
2N5830  
TO-92  
C
B
E
NPN General Purpose Amplifier  
This device is designed for general purpose high  
voltage amplifiers and gas discharge display driving. Sourced  
from Process 16. See 2N5551 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
100  
120  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5830  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

2N5830 替代型号

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