Datasheet > 2N5830_01

2N5830_01

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
7页	297K
描述
NPN General Purpose Amplifier

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2N5830_01 数据手册

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2N5830

TO-92

NPN General Purpose Amplifier

This device is designed for general purpose high

voltage amplifiers and gas discharge display driving. Sourced

from Process 16. See 2N5551 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

100

120

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

200

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5830

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

mW/°C

°C/W

R_θ

Thermal Resistance, Junction to Ambient

200

R_θ

°C/W

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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