2N5565

更新时间： 2024-01-28 03:43:17

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管放大器
页数	文件大小	规格书
5页	49K
描述
Matched N-Channel JFET Pairs

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2N5565 数据手册

2N5564/5565/5566

Vishay Siliconix

Matched N-Channel JFET Pairs

PRODUCT SUMMARY

Part Number V_GS(off)(V) V_(BR)GSSMin (V) g_fsMin (mS) I_GTyp (pA) jV_GS1– V_GS2j Max (mV)

2N5564

2N5565

2N5566

–0.5 to –3

–40

7.5

–3

FEATURES

BENEFITS

APPLICATIONS

D Two-Chip Design

D Tight Differential Match vs. Current

D Wideband Differential Amps

D High Slew Rate

D Improved Op Amp Speed, Settling Time

D High-Speed,

Accuracy

Temp-Compensated,

Single-Ended Input Amps

D High-Speed Comparators

D Impedance Converters

D Matched Switches

D Low Offset/Drift Voltage

D Low Gate Leakage: 3 pA

D Low Noise: 12 nV⁄√Hz @ 10 Hz

D Good CMRR: 76 dB

D Minimum Parasitics

D Minimum Input Error/Trimming Requirement

D Insignificant Signal Loss/Error Voltage

D High System Sensitivity

D Minimum Error with Large Input Signals

D Maximum High Frequency Performance

DESCRIPTION

The 2N5564/5565/5566 are matched pairs of JFETs mounted

in a TO-71 package. This two-chip design reduces parasitics

for good performance at high frequency while ensuring

The hermetically-sealed TO-71 package is available with full

military processing (see Military Information).

extremely tight matching.

This series features high

breakdown voltage (V_(BR)DSStypically > 55 V), high gain

(typically > 9 mS), and <5 mV offset between the two die.

For similar products see the low-noise U/SST401 series, and

the low-leakage 2N5196/5197/5198/5199 data sheets.

TO-71

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 V

Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Power Dissipation :

Per Side . . . . . . . . . . . . . . . . . . . . . . . . 325 mW

Total . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW

Notes

Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C

a. Derate 2.6 mW/_C above 25_C

b. Derate 5.2 mW/_C above 25_C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C

Document Number: 70254

S-04031—Rev. D, 04-Jun-01

www.vishay.com

8-1

12 3 4 5

中文翻译

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与2N5565相关器件

型号	品牌	获取价格	描述	数据表
2N5565-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, N-Channel, Junction FET
2N5566	VISHAY	获取价格	Matched N-Channel JFET Pairs
2N5566	NJSEMI	获取价格	MATCHED N-CHANNEL JFET PAIRS
2N5567	NJSEMI	获取价格	TRIACS BIDIRECTIONAL TRIODE THYRISTORS
2N5567	MOTOROLA	获取价格	BIDIRECTIONAL TRIODE THYRISTORS
2N5568	MOTOROLA	获取价格	BIDIRECTIONAL TRIODE THYRISTORS
2N5568	NJSEMI	获取价格	TRIACS BIDIRECTIONAL TRIODE THYRISTORS
2N5569	NJSEMI	获取价格	TRIACS BIDIRECTIONAL TRIODE THYRISTORS
2N5569	MOTOROLA	获取价格	BIDIRECTIONAL TRIODE THYRISTORS
2N5570	MOTOROLA	获取价格	BIDIRECTIONAL TRIODE THYRISTORS

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