2N5565

更新时间： 2024-02-25 10:06:57

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管放大器
页数	文件大小	规格书
5页	49K
描述
Matched N-Channel JFET Pairs

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数据手册

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2N5565 数据手册

2N5564/5565/5566

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

Output Characteristics

Transfer Characteristics

V_GS(off)= –1.5 V

V_GS(off)= –2 V

V_DS= 15 V

= 0 V

–0.1 V

–0.2 V

–0.3 V

–0.4 V

= –55_C

25_C

–0.5 V

–0.6 V

125_C

–0.7 V

–0.4

–0.8

–1.2

–1.6

–2

V_DS– Drain-Source Voltage (V)

V_GS– Gate-Source Voltage (V)

Capacitance vs. Gate-Source Voltage

Output Characteristics

V_GS= 0 V

V_GS(off)= –1.5 V

–0.2 V

f = 1 MHz

V_DS= 0 V

–0.1 V

–0.3 V

–0.4 V

–0.5 V

–0.6 V

–0.7 V

–0.8 V

iss

rss

–0.9 V

0.2

0.4

0.6

0.8

–4

–8

–12

–16

–20

_GS– Gate-Source Voltage (V)

V_DS– Drain-Source Voltage (V)

Gate Leakage Current

Common-Gate Input Admittance

10 nA

1 nA

100

I_GSS@ 25_C

V_DG= 15 V

I_D= 10 mA

= 25_C

I_D= 10 mA

1 mA

= 125_C

100 pA

10 pA

1 pA

1 mA

10 mA

I_GSS@ 25_C

= 25_C

I_G(on)@ I_D

0.1 pA

0.1

100

200

500

1000

V_DG– Drain-Gate Voltage (V)

f – Frequency (MHz)

Document Number: 70254

S-04031—Rev. D, 04-Jun-01

www.vishay.com

8-4

1 2 345

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