2N5565

更新时间： 2024-01-27 08:09:12

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管放大器
页数	文件大小	规格书
5页	49K
描述
Matched N-Channel JFET Pairs

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数据手册

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2N5565 数据手册

2N5564/5565/5566

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage

On-Resistance vs. Drain Current

100

200

r_DS@ ID = 1 mA, V_GS= 0

I_DSS@ V_DS= 15 V, V_GS= 0

= 25_C

160

I_DSS

V_GS(off)= –2 V

r_DS

120

–2

–4

–6

–8

–10

100

V_GS(off)– Gate-Source Cutoff Voltage (V)

I_D– Drain Current (mA)

Turn-On Switching

On-Resistance vs. Temperature

200

160

t approximately independent of I

V_DG= 5 V, R_G= 50 W

V_GS(L)= –10 V

I_D= 1 mA

_DSchanges 0.7%/_C

120

d(on)

V_GS(off)= –2 V

I_D= 12 mA

d(on)

I_D= 3 mA

–10

–55 –35 –15

25 45

85 105 125

–2

–4

–6

–8

– Temperature (_C)

V_GS(off)– Gate-Source Cutoff Voltage (V)

Forward Transconductance and Output Conductance

vs. Gate-Source Cutoff Voltage

Turn-Off Switching

500

and g @ V_DS= 15 V

independent of device V_GS(off)

d(off)

V_GS= 0 V, f = 1 kHz

V_DG= 5 V, V_GS(L)= –10 V

400

200

= –2 V

GS(off)

200

100

d(off)

–2

–4

–6

–8

–10

_GS(off)– Gate-Source Cutoff Voltage (V)

I_D– Drain Current (mA)

Document Number: 70254

S-04031—Rev. D, 04-Jun-01

www.vishay.com

8-3

1 234 5

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