Datasheet > 2N5400BU

2N5400BU

更新时间： 2024-11-24 20:58:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	546K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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2N5400BU 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.92
最大集电极电流 (IC)：	0.6 A	配置：	Single
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.35 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

2N5400BU 数据手册

2N5400

TO-92

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers

and switches requiring high voltages.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

120

130

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

600

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5400

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

R_θ

C/W

2001 Fairchild Semiconductor Corporation

2N5400, Rev A

12 3 4 5 6 7...9

中文翻译

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