Datasheet > 2N5401

2N5401

更新时间： 2024-11-24 05:56:39

品牌	Logo	应用领域
DAYA		晶体晶体管
页数	文件大小	规格书
2页	130K
描述
TO-92 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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2N5401 数据手册

TO-92 Plastic-Encapsulate Transistors

2N5401 TRANSISTOR (PNP)

TO-92

FEATURE

Switching and amplification in high voltage

Applications such as telephony

Low current(max. 600mA)

1.EMITTER

2.BASE

High voltage(max.160v)

3.COLLECTOR

1 2 3

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-160

-150

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.6

P_C

0.625

150

T_j

℃

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(_BR)CBO

V_(BR)CEO

V(BR)_EBO

I_CBO

Test

conditions

MIN

-160

-150

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -100μA, I_E=0

I_C= -1mA, I_B=0

I_E= -10μA, I_C=0

V_CB= -120 V, I_E=0

V_EB= -3V, I_C=0

-50

Emitter cut-off current

I_EBO

h_FE(1)

V_CE= -5V, I_C=-1 mA

V_CE= -5V, I_C= -10 mA

V_CE= -5V, I_C=-50 mA

I_C= -50mA, I_B= -5 mA

DC current gain

h_FE(2)

240

h_FE(3)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

-0.5

-1

V_CE=-5V,

f =30MHz

I_C=-10mA

Transition frequency

100

300

MHz

f_T

中文翻译

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