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2N5401 PDF预览

2N5401

更新时间: 2024-11-23 22:35:51
品牌 Logo 应用领域
MICRO-ELECTRONICS 晶体小信号双极晶体管高压
页数 文件大小 规格书
2页 169K
描述
COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS

2N5401 技术参数

生命周期:Contact Manufacturer包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.03
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
最大功率耗散 (Abs):0.63 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2N5401 数据手册

 浏览型号2N5401的Datasheet PDF文件第2页 

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