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2N5400S PDF预览

2N5400S

更新时间: 2024-11-19 22:35:51
品牌 Logo 应用领域
KEC 晶体晶体管高压局域网
页数 文件大小 规格书
2页 148K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

2N5400S 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.63其他特性:LOW NOISE
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2N5400S 数据手册

 浏览型号2N5400S的Datasheet PDF文件第2页 

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Small Signal Bipolar Transistor, 0.3A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
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Small Signal Bipolar Transistor, 0.3A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
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Small Signal Bipolar Transistor, 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2N5400TRC CENTRAL

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Small Signal Bipolar Transistor, 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,