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2N5401 PDF预览

2N5401

更新时间: 2024-02-22 02:14:17
品牌 Logo 应用领域
TYSEMI 晶体开关晶体管电话
页数 文件大小 规格书
1页 106K
描述
Switching and amplification in high voltage Applications such as telephony

2N5401 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.64基于收集器的最大容量:6 pF
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.5 V
Base Number Matches:1

2N5401 数据手册

  
                                                                                             
                                                                                                
                                                                                                 
                                                                                                   
                                                                                                     
                                                                                                       
                                                                                                        
                                                                                                          
                                                                                                            
                                                                                                              
                                                                                                               
TransistIoCr  
TTransistors  
Product specification  
2N5401  
TO-92  
Features  
Switching and amplification in high voltage  
Applications such as telephony  
Low current(max. 600mA)  
High voltage(max.150V)  
1
2
3
1. Emitter  
2. Base  
3. Collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-160  
Unit  
V
Collector-emitter voltage  
-150  
V
Emitter-base voltage  
-5  
V
Collector current-continuous  
Collector Power Dissipation  
Junction and storage temperature  
-600  
mA  
Pc  
625  
mW  
TJ, Tstg  
-55 to +150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test conditions  
Min  
-160  
-150  
-5  
Typ Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V(BR)CBO  
IC = -100 μA, IE = 0  
V(BR)CEO IC =- 1.0 mA, IB = 0  
V
V(BR)EBO  
ICBO  
V
IE = -10 μA, IC = 0  
VCB =- 120 V, IE = 0  
VEB = -3.0 V, IC = 0  
-50  
-50  
nA  
nA  
Emitter cutoff current  
IEBO  
IC = -1.0 mA, VCE = -5 V  
IC = -10 mA, VCE = -5 V  
IC = -50 mA, VCE = -5 V  
50  
60  
50  
DC current gain  
hFE  
240  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transiston frequency  
VCE(sat) IC = -50 mA, IB = -5.0 mA  
VBE(sat) IC = -50 mA, IB = -5.0 mA  
-0.5  
-1.0  
V
V
fT  
VCE=-5V,IC=-10mA,f=30MHz  
100  
300 MHz  
4008-318-123  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  

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