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2N5400-STYLE-G PDF预览

2N5400-STYLE-G

更新时间: 2024-11-25 03:04:35
品牌 Logo 应用领域
急速微 - ALLEGRO 晶体管
页数 文件大小 规格书
1页 25K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

2N5400-STYLE-G 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83最大集电极电流 (IC):0.3 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.2 V

2N5400-STYLE-G 数据手册

  

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