Datasheet > 2N5401

2N5401

更新时间： 2023-12-06 20:03:17

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	257K
描述
小信号晶体管

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数据手册

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2N5401 数据手册

2N5400 / 2N5401

PNP Silicon Epitaxial Planar Transistors

As complementary types the NPN transistors

2N5550 and 2N5551 are recommended.

Features

• On special request, these transistors can be

manufactured in different pin configurations

1. Emitter 2. Base 3. Collector

TO-92 Plastic Package

Applications

• For general purpose, high voltage amplifier

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

-V_CBO

Value

Unit

Collector Base Voltage

2N5400

2N5401

2N5400

2N5401

130

160

120

150

Collector Emitter Voltage

-V_CEO

Emitter Base Voltage

Collector Current

-V_EBO

-I_C

600

Power Dissipation

P_tot

T_j

625

Junction Temperature

Storage Temperature Range

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

200

Unit

Thermal Resistance from Junction to Ambient

℃/W

Dated: 17/06/2022 Rev: 03

1 / 5

12 3 4 5

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