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2N5400G PDF预览

2N5400G

更新时间: 2024-11-24 06:25:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
6页 84K
描述
Amplifier Transistors PNP Silicon

2N5400G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.22最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N5400G 数据手册

 浏览型号2N5400G的Datasheet PDF文件第2页浏览型号2N5400G的Datasheet PDF文件第3页浏览型号2N5400G的Datasheet PDF文件第4页浏览型号2N5400G的Datasheet PDF文件第5页浏览型号2N5400G的Datasheet PDF文件第6页 
2N5400, 2N5401  
Preferred Device  
Amplifier Transistors  
PNP Silicon  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
2
Rating  
Symbol 2N5400 2N5401  
Unit  
Vdc  
BASE  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current − Continuous  
Total Device Dissipation  
V
120  
130  
150  
160  
CEO  
CBO  
V
Vdc  
1
EMITTER  
V
EBO  
5.0  
Vdc  
I
C
600  
mAdc  
P
D
D
@ T = 25°C  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
A
TO−92  
Total Device Dissipation  
P
CASE 29  
STYLE 1  
@ T = 25°C  
1.5  
12  
Watts  
mW/°C  
C
Derate above 25°C  
1
2
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
3
MARKING DIAGRAM  
Maximum ratings are those values beyond which device damage can occur.  
Maximumratings applied to the device are individual stress limit values (not nor-  
mal operating conditions) and are not valid simultaneously. If these limits are ex-  
ceeded, device functional operation is not implied, damage may occur and reli-  
ability may be affected.  
2N  
540x  
AYWWG  
G
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
R
q
JA  
200  
°C/W  
Junction−to−Ambient  
Thermal Resistance,  
Junction−to−Case  
R
q
JC  
83.3  
°C/W  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 1  
2N5400/D  

2N5400G 替代型号

型号 品牌 替代类型 描述 数据表
2N5400RLRP ONSEMI

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Amplifier Transistors PNP Silicon
2N5400 FAIRCHILD

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PNP General Purpose Amplifier

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