生命周期: | Active | 包装说明: | POST/STUD MOUNT, O-MUPM-X3 |
Reach Compliance Code: | unknown | 风险等级: | 5.74 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 250 V |
配置: | SINGLE | JESD-30 代码: | O-MUPM-X3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5078 | NJSEMI |
获取价格 |
N-CHANNEL JFETS | |
2N5078 | TI |
获取价格 |
2N5078 | |
2N5078 | NSC |
获取价格 |
TRANSISTOR,JFET,N-CHANNEL,30V V(BR)DSS,25MA I(DSS),TO-72 | |
2N508 | NJSEMI |
获取价格 |
Trans GP BJT NPN 10V 0.02A 4-Pin TO-72 | |
2N5081 | NJSEMI |
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N.P.N SILICON HIGH FREQUENCY | |
2N5083 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-210AA | |
2N5084 | ETC |
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COLLECTOR CURRENT = 10 AMPS NPN TYPES | |
2N5085 | ETC |
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COLLECTOR CURRENT = 10 AMPS NPN TYPES | |
2N5086 | SAMSUNG |
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PNP EPITAXIAL SILICON TRANSISTOR | |
2N5086 | MICRO-ELECTRONICS |
获取价格 |
PNP/NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |