是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.69 | FET 技术: | JUNCTION |
JESD-609代码: | e0 | 最高工作温度: | 200 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.3 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N508 | NJSEMI |
获取价格 |
Trans GP BJT NPN 10V 0.02A 4-Pin TO-72 | |
2N5081 | NJSEMI |
获取价格 |
N.P.N SILICON HIGH FREQUENCY | |
2N5083 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-210AA | |
2N5084 | ETC |
获取价格 |
COLLECTOR CURRENT = 10 AMPS NPN TYPES | |
2N5085 | ETC |
获取价格 |
COLLECTOR CURRENT = 10 AMPS NPN TYPES | |
2N5086 | SAMSUNG |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR | |
2N5086 | MICRO-ELECTRONICS |
获取价格 |
PNP/NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS | |
2N5086 | FAIRCHILD |
获取价格 |
PNP General Purpose Amplifier | |
2N5086 | CENTRAL |
获取价格 |
Small Signal Transistors TO-92 Case (Continued) | |
2N5086 | NJSEMI |
获取价格 |
SI PNP LO-PWR BJT |