Datasheet > 2N50135S

2N50135S

更新时间： 2023-02-26 13:32:21

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	125K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 6 PIN

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2N50135S 数据手册

2N5013 thru 2N5015

SFT5013/5 thru SFT5015/5

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristic ^3/

Symbol

BV_CER

Min

Max

Units

Collector – Emitter Breakdown Voltage

(I_C= 200 µA_DC, R_BE= 1 KΩ)

5013

5014

5015

800

900

1000

––

Collector–Base Breakdown Voltage

(I_C= 200 µA_DC)

5013

5014

5015

800

900

1000

BV_CBO

BV_EBO

––

Emitter–Base Breakdown Voltage

(I_E= 50 µA_DC)

Collector Cutoff Current

(V_CB= 650 V)

(V_CB= 700 V)

5013

5014

5015

5013

5014

5015

––

100

(V_CB= 760 V)

I_CBO

µAdc

µA

(V_CB= 650 V, T_C= 100°C)

(V_CB= 700 V, T_C= 100°C)

(V_CB= 760 V, T_C= 100°C)

Emitter Cutoff Current

(V_EB= 4V)

DC Current Gain ^4/

I_EBO

—

(I_C= 5 mA_DC, V_CE= 10 V_DC)

(I_C= 20 mA_DC, V_CE= 10 V_DC)

h_FE

––

180

Collector – Emitter Saturation Voltage ^4/

5013

5014

5015

1.6

1.8

––

(I_C= 20 mA_DC, I_B= 5 mA_DC)

V_CE(Sat)

Vdc

Base – Emitter Saturation Voltage ^4/

(I_C= 20 mA_DC, I_B= 5 mA_DC)

V_BE(Sat)

f_T

––

1.0

––

Vdc

MHz

Current Gain Bandwidth Product

(I_C= 20 mA_DC, V_CE= 10 V_DC, f = 20 MHz)

Output Capacitance

(V_CB= 10 V_DC, I_E= 0 A_DC, f = 1.0 MHz)

Cob

Delay Time

Rise Time

Storage Time

Fall Time

V_CC= 125 V_DC,

I_C= 100 mA_DC,

I_B1= 20 mA_DC,

I_B2= 20 mA_DC

––

200

1200

3000

800

nsec

Case Outline: TO-39

PIN 1: EMITTER

Case Outline: TO-5

PIN 1: EMITTER

PIN 2: BASE

PIN 3: COLLECTOR

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0043D

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