Datasheet > 2N5015_08

2N5015_08

更新时间： 2022-09-16 13:03:10

品牌	Logo	应用领域
SEME-LAB		晶体晶体管高压
页数	文件大小	规格书
2页	85K
描述
HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR

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2N5015_08 数据手册

2N5015

2N5015S

MECHANICAL DATA

HIGH VOLTAGE

SILICON EPITAXIAL

NPN TRANSISTOR

Dimensions in mm (inches)

8.51 (0.34)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

6.10 (0.240)

6.60 (0.260)

0.89

(0.035)

max.

38.00

(1.5)

min.

FEATURES

0.41 (0.016)

0.53 (0.021)

dia.

•

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

HIGH BREAKDOWN VOLTAGE

LOW SATURATION VOLTAGE

HERMETIC TO5 or TO39 (‘S’ Suffix) PACKAGE

HI-RELIABILITY SCREENING OPTIONS AVAILABLE

5.08 (0.200)

typ.

2.54

(0.100)

APPLICATIONS

0.74 (0.029)

1.14 (0.045)

For high reliability general purpose high voltage switching

and linear applications requiring small size and low weight

devices.

0.71 (0.028)

0.86 (0.034)

45°

TO5 (TO-205AA)

Underside View

PIN 2 – Base

PIN 1 – Emitter

PIN 3 – Collector

ABSOLUTE MAXIMUM RATINGS T_CASE= 25°C unless otherwise stated

V_CBO

V_CER

V_EBO

I_C

Collector - Base Voltage

1000V

Collector - Emitter Voltage (R_BE= 1.0KΩ)

Emitter – Base Voltage

1000V

Continuous Collector Current

0.5A

P_tot

Total Power Dissipation

De-rate Linearly

T_case= 50°C

T_case> 25°C

20mW/°C

-55 to +150°C

T_stg,T_J

Operating and Storage Temperature Range

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be

both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab

encourages customers to verify that datasheets are current before placing orders.

DOC 7992 issue 1

Semelab plc. ^{Telephone +44(0)1455 556565. Fax +44(0)1455 552612.}

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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