2N5013 thru 2N5015
SFT5013/5 thru SFT5015/5
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
0.5 AMP
NPN Transistor
800 – 1000 Volts
2N50 __ __
SFT50 __ __
__
__
└
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
FEATURES:
BVCER to 1000 volts
Low Saturation Voltage
Package
/39 = TO-39
/5 = TO-5
Low Leakage at High Temperature
High Gain, Low Saturation
200° C Operating, Gold Eutectic Die Attach
2N5010 thru 2N5012 Also Available, Contact Factory
TX, TXV, and S-Level Screening Available
Family / Voltage
13 = 800V
14 = 900V
15 = 1000V
Maximum Ratings
Symbol
VCER
Value
Units
Collector – Emitter Voltage (RBE= 1 kΩ)
5013
5014
5015
800
900
1000
V
5013
5014
5015
800
900
1000
Collector – Base Voltage
VCBO
VEBO
V
V
V
Emitter – Base Voltage
5
5013
5014
5015
300
400
450
Collector – Emitter Breakdown Voltage
BVCEO
Peak Collector Current
Peak Base Current
IC
IB
0.5
A
250
mA
Total Device Dissipation @ TC = 100º C
Derate above 100º C
2.0
20
W
mW/ºC
PD
Operating and Storage Temperature
Thermal Resistance, Junction to Case
TOP, TSTG
RθJC
-65 to +200
50
ºC
ºC/W
Notes:
TO-39
TO-5
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043D
DOC