5秒后页面跳转
2N50135TX PDF预览

2N50135TX

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 125K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 6 PIN

2N50135TX 数据手册

 浏览型号2N50135TX的Datasheet PDF文件第2页 
2N5013 thru 2N5015  
SFT5013/5 thru SFT5015/5  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
0.5 AMP  
NPN Transistor  
800 – 1000 Volts  
2N50 __ __  
SFT50 __ __  
__  
__  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = S Level  
FEATURES:  
BVCER to 1000 volts  
Low Saturation Voltage  
Package  
/39 = TO-39  
/5 = TO-5  
Low Leakage at High Temperature  
High Gain, Low Saturation  
200° C Operating, Gold Eutectic Die Attach  
2N5010 thru 2N5012 Also Available, Contact Factory  
TX, TXV, and S-Level Screening Available  
Family / Voltage  
13 = 800V  
14 = 900V  
15 = 1000V  
Maximum Ratings  
Symbol  
VCER  
Value  
Units  
Collector – Emitter Voltage (RBE= 1 k)  
5013  
5014  
5015  
800  
900  
1000  
V
5013  
5014  
5015  
800  
900  
1000  
Collector – Base Voltage  
VCBO  
VEBO  
V
V
V
Emitter – Base Voltage  
5
5013  
5014  
5015  
300  
400  
450  
Collector – Emitter Breakdown Voltage  
BVCEO  
Peak Collector Current  
Peak Base Current  
IC  
IB  
0.5  
A
250  
mA  
Total Device Dissipation @ TC = 100º C  
Derate above 100º C  
2.0  
20  
W
mW/ºC  
PD  
Operating and Storage Temperature  
Thermal Resistance, Junction to Case  
TOP, TSTG  
RθJC  
-65 to +200  
50  
ºC  
ºC/W  
Notes:  
TO-39  
TO-5  
1/ For ordering information, price, operating curves, and availability - contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.  
4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: TR0043D  
DOC  

与2N50135TX相关器件

型号 品牌 描述 获取价格 数据表
2N5013S MICROSEMI NPN SILICON TRANSISTOR

获取价格

2N5014 NJSEMI HIGH VOLTAGE NPN TRANSISTOR

获取价格

2N5014 MICROSEMI NPN SILICON TRANSISTOR

获取价格

2N5014 SSDI 0.5 AMP 800 - 1000 Volts NPN Transistor

获取价格

2N5014 SEME-LAB SILICON EPITAXIAL NPN TRANSISTOR

获取价格

2N5014_01 SEME-LAB SILICON EPITAXIAL NPN TRANSISTOR

获取价格