Datasheet > 2N5014_01

2N5014_01

更新时间： 2022-09-16 13:02:43

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SEME-LAB		晶体晶体管
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描述
SILICON EPITAXIAL NPN TRANSISTOR

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数据手册

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2N5014_01 数据手册

2N5014

MECHANICAL DATA

Dimensions in mm (inches)

SILICON EPITAXIAL

NPN TRANSISTOR

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

6.10 (0.240)

6.60 (0.260)

0.89

(0.035)

max.

12.70

(0.500)

min.

FEATURES

0.41 (0.016)

0.53 (0.021)

dia.

General purpose power transistor for

switching and linear applications in a

hermetic TO–39 package.

5.08 (0.200)

typ.

2.54

(0.100)

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

45°

TO–39 PACKAGE

PIN 1 – Emitter

PIN 2 – Base

PIN 3 – Collector

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

900V

Collector – Base Voltage

CBO

CER

EBO

Collector – Emitter Voltage

Emitter – Base Reverse Voltage

Continuous Collector Current

Total Device Dissipation

R = 10Ω

3.5A

T = 25°C

TOT

200°C

-55 to 200°C

Maximum Operating Junction Temperature

and Storage Temperature Range

STG

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

Typ.

Max. Unit

Collector Base Leakage Current

D.C Current Gain

= 900V

= 10V

—

0.012

180

CBO

hFE

fae

I =0.02A

MHz

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Document Number 3070

Issue 1

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

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