Datasheet > 2N5015/39TXV

2N5015/39TXV

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	123K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

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2N5015/39TXV 数据手册

2N5015

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

0.5 AMP, 1000 Volts

NPN Transistor

2N50 15 __

└

│

└

│

└

Screening ^2/

__ = Not Screened

FEATURES:

 BVCER 1000 volts

 Low Saturation Voltage

 Low Leakage at High Temperature

 High Gain, Low Saturation

 200° C Operating, Gold Eutectic Die Attach

 TX, TXV, and S-Level Screening Available

TX = TX Level

TXV = TXV Level

S = S Level

Package

/39 = TO-39

/5 = TO-5

Family / Voltage

1000V

Maximum Ratings

Symbol

V_CER

Value

Units

Collector – Emitter Voltage (R_BE= 1 kΩ)

1000

Collector – Base Voltage

Emitter – Base Voltage

V_CBO

V_EBO

BV_CEO

I_C

1000

Collector – Emitter Breakdown Voltage

Peak Collector Current

450

0.5

250

Peak Base Current

I_B

Total Device Dissipation @ T_C= 100º C

Derate above 100º C

2.0

mW/ºC

P_D

Operating and Storage Temperature

Thermal Resistance, Junction to Case

T_OP, T_STG

R_θJC

-65 to +200

50 (typ 22)

ºC

ºC/W

Notes:

TO-39

TO-5

1/ For ordering information, price, operating curves, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.

4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0043E

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