Datasheet > 2N5015/39TXV

2N5015/39TXV

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	123K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

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2N5015/39TXV 数据手册

2N5015

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Electrical Characteristic ^3/

Symbol

BV_CER

Min

Typ

Max

Units

Collector – Emitter Breakdown Voltage

(I_C= 200 µA_DC, R_BE= 1 KΩ)

1000

1300

––

Collector–Base Breakdown Voltage

(I_C= 200 µA_DC)

BV_CBO

BV_EBO

––

Emitter–Base Breakdown Voltage

(I_E= 50 µA_DC)

Collector Cutoff Current (V_CB= 760 V)

––

0.08

100

I_CBO

I_EBO

h_FE

µAdc

µA

(V_CB= 760 V, T_C= 100°C)

Emitter Cutoff Current (V_EB= 4V)

—

0.003

DC Current Gain ^4/(I_C= 5 mA_DC, V_CE= 10 V_DC)

(I_C= 20 mA_DC, V_CE= 10 V_DC)

Collector – Emitter Saturation Voltage ^4/

(I_C= 20 mA_DC, I_B= 5 mA_DC)

Base – Emitter Saturation Voltage ^4/

(I_C= 20 mA_DC, I_B= 5 mA_DC)

180

1.8

––

V_CE(Sat)

V_BE(Sat)

f_T

––

0.07

0.7

Vdc

1.0

––

Vdc

MHz

Current Gain Bandwidth Product

(I_C= 20 mA_DC, V_CE= 10 V_DC, f = 20 MHz)

Output Capacitance

(V_CB= 10 V_DC, I_E= 0 A_DC, f = 1.0 MHz)

Cob

12.5

Delay Time

Rise Time

Storage Time

Fall Time

V_CC= 125 V_DC,

––

100

1500

450

200

1200

3000

800

I_C= 100 mA_DC,

I_B1= 20 mA_DC

I_B2= 20 mA_DC

pw= 2 us

nsec

Case Outline: TO-39

PIN 1: EMITTER

Case Outline: TO-5

PIN 1: EMITTER

PIN 2: BASE

PIN 3: COLLECTOR

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0043E

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