Datasheet > 2N4347

2N4347

更新时间： 2024-12-01 06:19:55

品牌	Logo	应用领域
COMSET		高功率电源
页数	文件大小	规格书
3页	197K
描述
HIGH POWER INDUSTRIAL TRANSISTORS

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数据手册

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2N4347 数据手册

2N3442

2N4347

HIGH POWER INDUSTRIAL TRANSISTORS

NPN silicon transistors designed for applications in industrial and commercial equipment including high

fidelity audio amplifiers, series and shunts regulators and power switches.

•

Low Collector-Emitter Saturation Voltage –

V_CE(sat)= 1.0 Vdc (Max) @ I_C= 2.0 Adc – 2N4347

Collector-Emitter Sustaining Voltage-

VCEO(sus) = 120 Vdc (Min) – 2N4347

140 Vdc (Min) – 2N3442

•

Excellent Second-Breakdown Capability

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

2N4347

2N3442

120

140

160

#Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

V_CEO

V_CB

V_EB

Vdc

7.0

5.0

Continuous

Collector Current

I_C

Adc

Peak

15 (**)

3.0

Continuous

Peak

7.0

Base Current

I_B

8.0

100

117

0.57

0.67

@ T_C= 25°

Total Device Dissipation

Watts

W/°C

P_D

Derate

above 25°

Junction Temperature

Storage Temperature

T_J

T_S

°C

-65 to +200

(**) This data guaranteed in addition to JEDEC registered data.

COMSET SEMICONDUCTORS

1/3

12 3

中文翻译

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与2N4347相关器件

型号	品牌	获取价格	描述	数据表
2N4348	NJSEMI	获取价格	Trans GP BJT NPN 120V 10A 3-Pin(2+Tab) TO-3
2N4350	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 350MA I(C) \| TO-5
2N4351	CALOGIC	获取价格	N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
2N4351	Linear Systems	获取价格	N-CHANNEL MOSFET ENHANCEMENT MODE
2N4351	INTERSIL	获取价格	N-CHANNEL JFET
2N4351	NJSEMI	获取价格	N-CHANNEL ENHANCEMENT
2N4351	MICROSS	获取价格	an enhancement mode N-Channel Mosfet
2N4351_TO-72	MICROSS	获取价格	an enhancement mode N-Channel Mosfet
2N4352	NJSEMI	获取价格	P-CHANNEL ENHANCEMENT MOSFET
2N4352	CALOGIC	获取价格	P-Channel Enhancement Mode MOSFET Amplifier/Switch