Datasheet > 2N4352_TO-72

2N4352_TO-72

更新时间： 2024-11-07 07:28:35

品牌	Logo	应用领域
MICROSS		/
页数	文件大小	规格书
1页	310K
描述
an enhancement mode N-Channel Mosfet

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2N4352_TO-72 数据手册

2N4352

N-CHANNEL MOSFET

The 2N4352 is an enhancement mode N-Channel Mosfet

FEATURES

The 2N4352 is an enhancement mode N-Channel

Mosfet designed for use as a General Purpose amplifier

or switch

DIRECT REPLACEMENT FOR INTERSIL 2N4352

HIGH DRAIN CURRENT

I_D= 100mA

HIGH GAIN

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

g_fS= 1000µS

The hermetically sealed TO-72 package is well suited

for high reliability and harsh environment applications.

(See Packaging Information).

Maximum Temperatures

Storage Temperature

‐65°C to +200°C

‐55°C to +150°C

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Drain to Source (Note 1)

MAXIMUM VOLTAGES

Drain to Body

2N4352 Features:

375mW

100mA

Low ON Resistance

Low Capacitance

High Gain

High Gate Breakdown Voltage

Low Threshold Voltage

25V

Drain to Source

Peak Gate to Source (Note 2)

±125V

2N4352 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_DSS

V_DS(on)

V_GS(th)

I_GSS

I_DSS

I_D(on)

g_fs

CHARACTERISTIC

Drain to Source Breakdown Voltage

Drain to Source “On” Voltage

Gate to Source Threshold Voltage

Gate Leakage Current

MIN

‐‐

1000

TYP.

‐‐

MAX

‐‐

UNITS

CONDITIONS

I_D= 10µA, V_GS= 0V

I_D= 2mA, V_GS= 10V

V_DS= 10V, I_D= 10µA

V_GS= ±30V, V_DS= 0V

V_GS= 10V, V_DS= 10V

‐‐

µS

Drain Leakage Current “Off”

Drain Current “On”

Forward Transconductance

‐‐

V_DS= 10V, I_D= 2mA , f = 1MHz

r_DS(on)

Drain to Source “On” Resistance

‐‐

300

V_GS= 10V, I_D= 0A, f = 1kHz

C_rss

C_iss

C_db

Reverse Transfer Capacitance

Input Capacitance

‐‐

1.3

5.0

V_DS= 0V, V_GS= 0V , f = 140kHz

V_DS= 10V, V_GS= 0V , f = 140kHz

V_DB= 10V, f = 140kHz

Drain to Body Capacitance

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SWITCHING CHARACTERISTICS

TIMING WAVEFORMS

SYMBOL

t_d(on)

t_r

t_d(off)

t_f

CHARACTERISTIC

MAX

100

UNITS

Turn On Delay Time

Turn On Rise Time

Turn Off Delay Time

Turn Off Fall Time

SWITCHING TEST CIRCUIT

Note 1 ‐ Absolute maximum ratings are limiting values above which 2N4352 serviceability may be impaired.

Note 2 ‐ Device must not be tested at ±125V more than once or longer than 300ms.

Micross Components Europe

Available Packages:

TO-72 (Bottom View)

2N4352 in TO-72

2N4352 in bare die.

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Please contact Micross for full

package and die dimensions

* Body tied to case

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

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与2N4352_TO-72相关器件

型号	品牌	获取价格	描述	数据表
2N4354	ASI	获取价格	Transistor
2N4354	NJSEMI	获取价格	Trans GP BJT PNP 60V 1A
2N4355	ASI	获取价格	Transistor
2N4355	NJSEMI	获取价格	Trans GP BJT PNP 60V 1A
2N4356	NJSEMI	获取价格	Trans GP BJT PNP 80V 1A
2N4357	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 240V V(BR)CEO \| 100MA I(C) \| TO-18
2N4358	CENTRAL	获取价格	Small Signal Transistors
2N4358	ASI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
2N4358LEADFREE	CENTRAL	获取价格	暂无描述
2N4359	CENTRAL	获取价格	Small Signal Transistors

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