Datasheet > 2N4351

2N4351

更新时间： 2024-11-06 22:35:51

品牌	Logo	应用领域
Linear Systems		晶体晶体管
页数	文件大小	规格书
2页	206K
描述
N-CHANNEL MOSFET ENHANCEMENT MODE

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2N4351 数据手册

2N4351

N-CHANNEL MOSFET

ENHANCEMENT MODE

Linear Integrated Systems

FEATURES

DIRECT REPLACEMENT FOR INTERSIL 2N4351

HIGH DRAIN CURRENT

HIGH GAIN

I_D= 100mA

g_fs= 1000µS

TO-72

BOTTOM VIEW

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +200 °C

-55 to +150 °C

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Current

375mW

100mA

Drain to Source

Maximum Voltages

Drain to Body

* Body tied to Case.

25V

±125V

Drain to Source

Peak Gate to Source²

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V_SB= 0V unless otherwise stated)

SYMBOL

BV_DSS

V_DS(on)

V_GS(th)

I_GSS

I_DSS

I_D(on)

g_fs

r_DS(on)

C_rss

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

Drain to Source Breakdown Voltage

Drain to Source "On" Voltage

Gate to Source Threshold Voltage

Gate Leakage Current

Drain Leakage Current "Off"

Drain Current "On"

Forward Transconductance

Drain to Source "On" Resistance

Reverse Transfer Capacitance

Input Capacitance

I_D= 10µA, V_GS= 0V

I_D= 2mA, V_GS= 10V

V_DS= 10V, I_D= 10µA

µS

Ω

V_GS= ±30V, V_DS= 0V

V_DS= 10V, V_GS= 0V

V_GS= 10V, V_DS= 10V

V_DS= 10V, I_D= 2mA, f = 1MHz

V_GS= 10V, I_D= 0A, f = 1kHz

V_DS= 0V, V_GS= 0V, f = 140kHz

V_DS= 10V, V_GS= 0V, f = 140kHz

V_DB= 10V, f = 140kHz

1000

300

1.3

5.0

C_iss

C_db

Drain to Body Capacitance

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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