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2N4351 PDF预览

2N4351

更新时间: 2024-11-30 22:35:51
品牌 Logo 应用领域
Linear Systems 晶体晶体管
页数 文件大小 规格书
2页 206K
描述
N-CHANNEL MOSFET ENHANCEMENT MODE

2N4351 数据手册

 浏览型号2N4351的Datasheet PDF文件第2页 
2N4351  
N-CHANNEL MOSFET  
ENHANCEMENT MODE  
Linear Integrated Systems  
FEATURES  
DIRECT REPLACEMENT FOR INTERSIL 2N4351  
HIGH DRAIN CURRENT  
HIGH GAIN  
ID = 100mA  
gfs = 1000µS  
TO-72  
BOTTOM VIEW  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Maximum Temperatures  
Storage Temperature  
G
S
2
1
3
4
D
C
-65 to +200 °C  
-55 to +150 °C  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
Maximum Current  
375mW  
100mA  
Drain to Source  
Maximum Voltages  
Drain to Body  
* Body tied to Case.  
25V  
25V  
±125V  
Drain to Source  
Peak Gate to Source2  
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)  
SYMBOL  
BVDSS  
VDS(on)  
VGS(th)  
IGSS  
IDSS  
ID(on)  
gfs  
rDS(on)  
Crss  
CHARACTERISTIC  
MIN TYP MAX UNITS CONDITIONS  
Drain to Source Breakdown Voltage  
Drain to Source "On" Voltage  
Gate to Source Threshold Voltage  
Gate Leakage Current  
Drain Leakage Current "Off"  
Drain Current "On"  
Forward Transconductance  
Drain to Source "On" Resistance  
Reverse Transfer Capacitance  
Input Capacitance  
25  
ID = 10µA, VGS = 0V  
V
1
5
ID = 2mA, VGS = 10V  
VDS = 10V, ID = 10µA  
1
10  
10  
pA  
nA  
mA  
µS  
VGS = ±30V, VDS = 0V  
VDS = 10V, VGS = 0V  
VGS = 10V, VDS = 10V  
VDS = 10V, ID = 2mA, f = 1MHz  
VGS = 10V, ID = 0A, f = 1kHz  
VDS = 0V, VGS = 0V, f = 140kHz  
VDS = 10V, VGS = 0V, f = 140kHz  
VDB = 10V, f = 140kHz  
3
1000  
300  
1.3  
5.0  
5.0  
pF  
Ciss  
Cdb  
Drain to Body Capacitance  
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  

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